氧化硅薄膜良好的硬度、光学性能、介电性质、耐磨及抗蚀等特性，在光学、微电子等领域有着广泛的应用前景，是目前国际上广泛关注的功能材料。氧化硅有两个突出的用途：它的绝缘性可以作为保护膜使p-n结免受周围环境杂质的污染；此外，可以用作稳定的、高温掩膜阻隔材料，能选择性阻挡施主或受主杂质进入硅片中。因此，要求氧化硅薄膜具有高稳定性及良好性能。
本论文阐述氧化硅活性薄膜的工艺条件及优化方案，所考察的因素对薄膜性能的影响次序是靶-基距＞基片温度＞溅身气压＞溅射气压＞溅射功率。
本论文提出利用直流磁控溅射及相关控制设备在表面为氧化硅的基片上溅镀Al接触层以测量分析表面为氧化硅的不锈钢基片的性能。
关键词：氧化硅薄膜 镀Al接触层 测量 磁控溅射
Abstract
SiOX thin films have many excellent properties such as hardness, optical properties, dielectric properties, wear resistance and corrosion resistance. It has been widely used in optical and micro-electronic applications. In general， SiOX has two prominent uses. Its isolation is not only utilized as protective film to protect p-n junction from polluting by surrounding impurity., but also can be used as stable, high temperature mask material. Additionally, it can obstruct donor impurity or acceptor impurity into silicon chip. Thereby, it is important for SiOX film to have high stability and well capability.
The optimization way and technological parameters of active SiOX thin film are discussed in this paper. The results show the influence sequence of technological parameters to SiOX thin film is substrate-target distance, substrate temperature, sputtering pressure, sputtering power.
A procedure which is to deposit Al contact layer on the substrate with SiOX on the surface making use of DC magnetron sputtering and correlative control equipment. After that, the properties of SiOX thin film on the stainless steel target are measured.
Keywords: SiOX thin film; Al contact layer deposition; measurement; magnetron sputtering
